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Titolo:
STRAIN MECHANISM OF LINBO3 SAPPHIRE HETEROSTRUCTURES GROWN BY PULSED-LASER DEPOSITION/
Autore:
SHIBATA Y; KUZE N; MATSUI M; KANAI M; KAWAI TJ;
Indirizzi:
ASAHI CHEM IND CO LTD,CENT RES LABS SHIZUOKA 416 JAPAN OSAKA UNIV,INST SCI & IND RES OSAKA 567 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 12A, volume: 36, anno: 1997,
pagine: 7344 - 7347
SICI:
0021-4922(1997)36:12A<7344:SMOLSH>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
ACOUSTIC-WAVE PROPERTIES; LINBO3 THIN-FILMS; EPITAXIAL-GROWTH; LITHIUM-NIOBATE; SAPPHIRE; ABLATION;
Keywords:
LINBO3; SAPPHIRE; EPITAXIAL THIN FILM; STRAIN; THERMAL EXPANSION COEFFICIENTS; PULSED LASER DEPOSITION;
Tipo documento:
Article
Natura:
Periodico
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
Y. Shibata et al., "STRAIN MECHANISM OF LINBO3 SAPPHIRE HETEROSTRUCTURES GROWN BY PULSED-LASER DEPOSITION/", JPN J A P 1, 36(12A), 1997, pp. 7344-7347

Abstract

Thin LiNbO3 films are deposited on (001) sapphire substrates by a pulsed laser deposition technique. The epitaxial growth of the films is confirmed by high-resolution X-ray diffraction action (HRXRD) and high-resolution transmission electron microscopy (TER I) analyses. The lattice parameters and thermal expansion coefficients of the films are determined by an XRD technique. The deposited films are strained at room temperature; that is, the a-axis is longer and the c-axis is shorter than those of LiNbO3 single crystals. On the contrary, the films are not strained at the deposition temperature of 735 degrees C, The strain of the films is caused by the large differences in the thermal expansion coefficients between LiNbO3 and sapphire substrates.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 04:33:50