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Titolo:
FABRICATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR-STRUCTURED SILICON FIELD EMITTERS WITH A POLYSILICON DUAL-GATE
Autore:
KANEMARU S; OZAWA K; EHARA K; HIRANO T; TANOUE H; ITOH J;
Indirizzi:
ELECTROTECH LAB,1-1-4 UMEZONO IBARAKI OSAKA 305 JAPAN MUSASHI INST TECHNOL,FAC ENGN,DEPT ELECT & ELECT ENGN,SETAGAYA KU TOKYO 158 JAPAN TOYOKOHAN CO LTD YAMAGUCHI 744 JAPAN KOBE STEEL LTD,NISHI KU KOBE HYOGO 65122 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 12B, volume: 36, anno: 1997,
pagine: 7736 - 7740
SICI:
0021-4922(1997)36:12B<7736:FOMF>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Soggetto:
EMISSION; ARRAYS; TIP;
Keywords:
FIELD EMISSION; FET CONTROLLED EMISSION; DUAL-GATE MOSFET EMITTER; SILICON FIELD EMITTER ARRAY; EMISSION MECHANISM;
Tipo documento:
Article
Natura:
Periodico
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
S. Kanemaru et al., "FABRICATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR-STRUCTURED SILICON FIELD EMITTERS WITH A POLYSILICON DUAL-GATE", JPN J A P 1, 36(12B), 1997, pp. 7736-7740

Abstract

We have fabricated a new silicon field emitter that incorporates a metal-oxide-silicon field-effect transistor (MOSFET) structure with a dual gate. One gate is an extraction gate that extracts electrons from the emitter. The other is a control gate that controls the channel conductance in order to regulate the emission current. The fabrication process is simple and compatible with conventional LSI process. The present device exhibits excellent controllability and stability of the emission current. This is because electron emission from the emitter is precisely regulated by the channel current of the built-in MOSFET.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/12/20 alle ore 18:01:12