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Titolo:
FABRICATION OF FLAT END MIRROR ETCHED BY FOCUSED ION-BEAM FOR GAN-BASED BLUE-GREEN LASER-DIODE
Autore:
ITO T; ISHIKAWA H; EGAWA T; JIMBO T; UMENO M;
Indirizzi:
NAGOYA UNIV,DEPT ELECT & COMP ENGN,SHOWA KU,GOKISO CHO NAGOYA AICHI 466 JAPAN NAGOYA INST TECHNOL,RES CTR MICROSTRUCT DEVICES,SHOWA KU NAGOYA AICHI466 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 12B, volume: 36, anno: 1997,
pagine: 7710 - 7711
SICI:
0021-4922(1997)36:12B<7710:FOFEME>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Keywords:
FOCUSED ION BEAM ETCHING; END MIRROR; GAN-BASED BLUE-GREEN LASER DIODE; ROOT MEAN SQUARE SURFACE ROUGHNESS; ATOMIC FORCE MICROSCOPY; METALORGANIC CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING;
Tipo documento:
Article
Natura:
Periodico
Citazioni:
6
Recensione:
Indirizzi per estratti:
Citazione:
T. Ito et al., "FABRICATION OF FLAT END MIRROR ETCHED BY FOCUSED ION-BEAM FOR GAN-BASED BLUE-GREEN LASER-DIODE", JPN J A P 1, 36(12B), 1997, pp. 7710-7711

Abstract

Heteroepitaxial GaN film was deposited on sapphire by metalorganic chemical vapor deposition. mirror for the GaN-based blue-green laser diode was prepared using focused ion beam (FIB) etching. The tilt angle normal to the GaN layer was shown to be less than 1 degrees by scanningloll microscopy. The root mean square surface roughness was 11 Angstrom as observed by atomic force microscopy. The data indicates that FIBis a powerful technique for the fabrication of GaN-based blue-green laser diodes.

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Documento generato il 15/07/20 alle ore 07:55:02