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Titolo:
CONFINEMENT DEPENDENCE OF BIEXCITONIC BINDING-ENERGIES IN SEMICONDUCTOR QUANTUM-WELLS
Autore:
EUTENEUER A; MOBIUS J; RETTIG R; HOFMANN M; MAYER EJ; STOLZ W; GOBEL EO; RUHLE WW;
Indirizzi:
UNIV MARBURG,FACHBEREICH PHYS,RENTHOF 5 D-35032 MARBURG GERMANY UNIV MARBURG,WISSENSCH ZENTRUM MAT WISSENSCH D-35032 MARBURG GERMANY
Titolo Testata:
Physica status solidi. a, Applied research
fascicolo: 1, volume: 164, anno: 1997,
pagine: 253 - 258
SICI:
0031-8965(1997)164:1<253:CDOBBI>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
EXCITONS; BEATS;
Tipo documento:
Article
Natura:
Periodico
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
A. Euteneuer et al., "CONFINEMENT DEPENDENCE OF BIEXCITONIC BINDING-ENERGIES IN SEMICONDUCTOR QUANTUM-WELLS", Physica status solidi. a, Applied research, 164(1), 1997, pp. 253-258

Abstract

We study the dependence of the biexciton binding energy on confinement in semiconductor quantum wells. A set of symmetrically strained (GaIn)As/Ga(PAs) quantum wells with different well depths and equal well widths is investigated by quantum beat spectroscopy based on transient degenerate four-wave mixing. The ratio of biexcitonic to excitonic binding energy increases with stronger confinement. This ne iv experimental result is discussed in the framework of recent theoretical predictions and experimental results.

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Documento generato il 02/12/20 alle ore 05:25:50