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Titolo:
LOW-NOISE 65O-NM-BAND ALGAINP VISIBLE LASER-DIODES WITH A HIGHLY DOPED SATURABLE ABSORBING LAYER
Autore:
KIDOGUCHI I; ADACHI H; KAMIYAMA S; FUKUHISA T; MANNOH M; TAKAMORI A;
Indirizzi:
MATSUSHITA ELECT IND CO LTD,SEMICOND RES CTR,3-15 YAGUMO NAKAMACHI MORIGUCHI OSAKA 570 JAPAN
Titolo Testata:
IEEE journal of quantum electronics
fascicolo: 5, volume: 33, anno: 1997,
pagine: 831 - 837
SICI:
0018-9197(1997)33:5<831:L6AVLW>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
DOUBLE-HETEROSTRUCTURE LASERS; SEMICONDUCTOR-LASERS; RECOMBINATION RATES; SELF; SUPPRESSION; PULSATIONS; SUBSTRATE; MODEL;
Keywords:
ALUMINUM MATERIALS/DEVICES; GALLIUM MATERIALS/DEVICES; INDIUM MATERIALS/DEVICES; LASER ABSORBERS; LASER NOISE; OPTICAL DEVICE FABRICATION; SEMICONDUCTOR DEVICE DOPING; SEMICONDUCTOR LASERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
31
Recensione:
Indirizzi per estratti:
Citazione:
I. Kidoguchi et al., "LOW-NOISE 65O-NM-BAND ALGAINP VISIBLE LASER-DIODES WITH A HIGHLY DOPED SATURABLE ABSORBING LAYER", IEEE journal of quantum electronics, 33(5), 1997, pp. 831-837

Abstract

Stable self-sustained pulsating and low-noise 650-nm-band AlGaInP visible laser diodes were demonstrated by adopting a novel structure, which has a highly doped saturable absorbing (SA) layer. Short carrier lifetime, which is indispensable for self-pulsation, was realized by applying high doping concentration to the p-type SA layer, 500-mu m-long devices with 51%/51% coated facets were fabricated, resulting in the threshold current of 75 mA at 20 degrees C. The temporal output power was measured at the average output power of 5 mW and the stable self-pulsation was observed up to an ambient temperature of 60 degrees C. Therefore, the relative intensity noise (RIN) was kept about -140 dB/Hz in temperature ranging from 20 degrees C to 60 degrees C. Since the refractive index difference could be kept large and the optical mode could be confined effectively, the astigmatism in this work was below 3 mum at 5 mW against dc injection current. The lasers operated over 1350h under the average output power of 5 mW at 60 degrees C.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 16:07:35