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Titolo:
LASER-DIODES IN PHOTON NUMBER SQUEEZED STATE
Autore:
KAKIMOTO S; SHIGIHARA K; NAGAI Y;
Indirizzi:
MITSUBISHI ELECTR CORP,OPTOELECT & MICROWAVE DEVICES RES & DEV LAB ITAMI HYOGO 664 JAPAN
Titolo Testata:
IEEE journal of quantum electronics
fascicolo: 5, volume: 33, anno: 1997,
pagine: 824 - 830
SICI:
0018-9197(1997)33:5<824:LIPNSS>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Soggetto:
EXTERNAL-FIELD FLUCTUATIONS; QUANTUM-WELL LASERS; SEMICONDUCTOR-LASER; NOISE; OSCILLATOR; STATISTICS; GENERATION; RADIATION; LIGHT;
Keywords:
AM NOISE; LASER NOISE; NOISE; OPTICAL NOISE; SEMICONDUCTOR LASERS; SHOT NOISE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
29
Recensione:
Indirizzi per estratti:
Citazione:
S. Kakimoto et al., "LASER-DIODES IN PHOTON NUMBER SQUEEZED STATE", IEEE journal of quantum electronics, 33(5), 1997, pp. 824-830

Abstract

A laser diode with an intrinsic layer as the space charge limited current region is expected to emit a low noise (less than the shoe noise level) light. However, when one applies the intrinsic layer to the Baser diode, he faces severe difficulty. Because the intrinsic layer has a very high resistivity, the applied voltage to operate the laser diode is too large and causes catastrophic damage to the laser diode, Herewe propose novel laser diodes which emit a low noise light, The firstis an AlGaAs laser diode having an undoped layer between the active layer and the cladding layer which acts as the space charge limited current region, Fano factor, F-m, of this laser diode is 28% smaller thanthe shot noise level (standard quantum limit, Fm = 1) at 21 mA (output power, P-o = 20 mW). The second cane is an InGaAsP laser diode having two tunnel barrier layers whose bandgap energy is larger than that of the cladding layer, The region between the barriers acts as the space charge limited current region, Fano factor, F-m of this laser diode is 47% smaller than the shot noise level at 21 mA (P-o = 10 mW). On the other hand, an AlGaAs laser diode with the two tunnel barrier layershas Fano factor, F-m which is 43% smaller than the shot noise level at 21 mA (Po = 20 mW). The calculated amplitude noise spectral densities of the latter two laser diodes are in good agreement with the calculated values from Langevin method. However the calculated amplitude noise spectral density of the former laser diode does not agree with the calculated value from Langevin method. This disagreement is also discussed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 22:09:13