Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
AUTOSTOICHIOMETRIC VAPOR-DEPOSITION III - A STUDY OF STOICHIOMETRY AND CHARACTERIZATION OF EPITAXIAL LITAO3 LAYER
Autore:
CHOUR KW; ZHANG RC; GOORSKY MS; TAKADA T; AKIBA E; KUMAGAI T; KAWAGUCHI K; JENSEN ML; EAVES C; XU R;
Indirizzi:
UNIV UTAH,DEPT MAT SCI & ENGN SALT LAKE CITY UT 84112 UNIV UTAH,DEPT MAT SCI & ENGN SALT LAKE CITY UT 84112 UNIV CALIF LOS ANGELES,DEPT MAT SCI & ENGN LOS ANGELES CA 90024 NATL INST MAT & CHEM RES,DEPT INORGAN MAT TSUKUBA IBARAKI JAPAN
Titolo Testata:
Journal of crystal growth
fascicolo: 1-2, volume: 183, anno: 1998,
pagine: 217 - 226
SICI:
0022-0248(1998)183:1-2<217:AVI-AS>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS; LITHIUM TANTALATE; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
K.W. Chour et al., "AUTOSTOICHIOMETRIC VAPOR-DEPOSITION III - A STUDY OF STOICHIOMETRY AND CHARACTERIZATION OF EPITAXIAL LITAO3 LAYER", Journal of crystal growth, 183(1-2), 1998, pp. 217-226

Abstract

The effect of precursor vapor pressure on LiNbO3 and LiTaO3 film stoichiometry is compared for single and double alkoxides. Stoichiometric evaporation can be achieved in an appropriate temperature and pressurerange according to the precursor sublimate composition analysis. The deposited LiTaO3 films from LiTa(1-OC4H9)(6) were stoichiometric and epitaxial when a lattice-matched single-crystal substrate nias used. The stoichiometry of the film was assessed by Rutherford backscattering and precision lattice parameter measurements. The high quality of the epitaxial layer was confirmed by high-resolution double-and triple-axes X-ray diffraction.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/01/20 alle ore 18:26:43