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Titolo:
STUDY OF GESI ALLOY DEPOSITION ON GE SUBSTRATE BY VERY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Autore:
GU SL; WANG RH; JIANG N; ZHU SM; ZHANG R; SHI Y; HU LQ; ZHENG YD;
Indirizzi:
NANJING UNIV,NATL LAB SOLID STATE MICROSTRUCT,INST SOLID STATE PHYS NANJING 210093 PEOPLES R CHINA NANJING UNIV,CTR ADV STUDIES SCI & TECHNOL MICROSTRUCT NANJING 210093PEOPLES R CHINA NANJING UNIV,DEPT PHYS NANJING 210093 PEOPLES R CHINA
Titolo Testata:
Journal of crystal growth
fascicolo: 1-2, volume: 183, anno: 1998,
pagine: 117 - 123
SICI:
0022-0248(1998)183:1-2<117:SOGADO>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
TEMPERATURE-DEPENDENCE; GROWTH; LAYERS; GEXSI1-X;
Keywords:
GESI ALLOY; VERY LOW PRESSURE; CVD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
S.L. Gu et al., "STUDY OF GESI ALLOY DEPOSITION ON GE SUBSTRATE BY VERY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION", Journal of crystal growth, 183(1-2), 1998, pp. 117-123

Abstract

We have studied the GeSi alloy deposition on Ge substrate by rapid thermal process, very low-pressure CVD method. The growth rate of the GeSi alloy increases with increasing the Si composition at a proper temperature. The high substrate temperature will cause the Si fraction andthe GeSi growth rare to increase. Kinetics study of very low-pressurechemical vapor deposition has been used to discuss these results.

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Documento generato il 29/03/20 alle ore 15:28:31