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Titolo:
LIMITED GEIGER-MODE SILICON PHOTODIODE WITH VERY HIGH-GAIN
Autore:
BONDARENKO G; DOLGOSHEIN B; GOLOVIN V; ILYIN A; KLANNER R; POPOVA E;
Indirizzi:
MOSCOW ENGN & PHYS INST MOSCOW RUSSIA CTR PERSPECT TECHNOL & APPARATUS MOSCOW RUSSIA DESY D-2000 HAMBURG GERMANY
Titolo Testata:
Nuclear physics. B
, , anno: 1998, supplemento:, 61B
pagine: 347 - 352
SICI:
0550-3213(1998):<347:LGSPWV>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
3
Recensione:
Indirizzi per estratti:
Citazione:
G. Bondarenko et al., "LIMITED GEIGER-MODE SILICON PHOTODIODE WITH VERY HIGH-GAIN", Nuclear physics. B, 1998, pp. 347-352

Abstract

The novel type of the Silicon Photodiode - Limited Geiger-mode Photodiode (LGP) has been produced and studied. The device consists of many approximate to 10(4) mm(-2) independent cells approximate to 10 mkm size around n(+)-''pins'' located between p-substrate and thin SiC layer. Very high gain more than 10(4) for 0.67 mkm wave length light sourceand up to 6.10(5) for single electron have been achieved. The LGP photon detection efficiency at the level of one percent has been measured.

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Documento generato il 04/12/20 alle ore 20:06:26