Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
W TIN DOUBLE-LAYERS AS BARRIER SYSTEM FOR USE IN CU METALLIZATION/
Autore:
BAUMANN J; MARKERT M; WERNER T; EHRLICH A; RENNAU M; KAUFMANN C; GESSNER T;
Indirizzi:
CHEMNITZ UNIV TECHNOL,CTR MICROTECHNOL D-09107 CHEMNITZ GERMANY CHEMNITZ UNIV TECHNOL,INST PHYS D-09107 CHEMNITZ GERMANY
Titolo Testata:
Microelectronic engineering
fascicolo: 1-4, volume: 37-8, anno: 1997,
pagine: 229 - 236
SICI:
0167-9317(1997)37-8:1-4<229:WTDABS>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON; COPPER; OXIDATION;
Keywords:
CU; TIN; W; BARRIER; ADHESION; TEXTURE; RESISTIVITY; SPUTTERING;
Tipo documento:
Article
Natura:
Periodico
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
J. Baumann et al., "W TIN DOUBLE-LAYERS AS BARRIER SYSTEM FOR USE IN CU METALLIZATION/", Microelectronic engineering, 37-8(1-4), 1997, pp. 229-236

Abstract

The properties of Cu/W/TiN film stacks were studied. Adding at thin Wlayer to a known stable TiN diffusion barrier significantly affects the whole metallization system. The introduction of a thin W interlayercauses a significant change of the Cu texture, while the film stress remains stable. The adhesion of Cu on W is excellent, if deposited without vacuum break. The poor adhesion of Cu on air exposed W/TiN is improved by a subsequent annealing step in H-2. The performed analytical and electrical barrier tests demonstrate the tandem barrier to be stable up to 650 degrees C.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 07/08/20 alle ore 00:42:34