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Titolo:
MECHANISM STUDIES OF CU RIE FOR VLSI INTERCONNECTIONS
Autore:
MARKERT M; BERTZ A; GESSNER T;
Indirizzi:
CHEMNITZ ZWICKAU UNIV TECHNOL,CTR MICROTECHNOL D-09107 CHEMNITZ GERMANY
Titolo Testata:
Microelectronic engineering
fascicolo: 1-4, volume: 37-8, anno: 1997,
pagine: 127 - 133
SICI:
0167-9317(1997)37-8:1-4<127:MSOCRF>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
COPPER; SURFACE; CHLORINE; CL2;
Keywords:
COPPER; RIE; DRY ETCHING; INTERCONNECTS; METALLIZATION;
Tipo documento:
Article
Natura:
Periodico
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
M. Markert et al., "MECHANISM STUDIES OF CU RIE FOR VLSI INTERCONNECTIONS", Microelectronic engineering, 37-8(1-4), 1997, pp. 127-133

Abstract

The reactive ion etching of copper in Cl-2 and Cl-2/CF4 based plasmashas been investigated. Mass spectrometry was used to study the volatile species formed in the discharge using different gas mixtures. The analysis indicates that copper forms different complex halogenides (CuxClyFz) with a higher volatility depending on the halogen composition. The results show that Cu etching using halogen mixtures is possible atsubstrate temperatures as low as 165 degrees C. Finally, reliable patterning of 0.5 mu m thick Cu films down to 0.2 mu m line width has been shown.

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Documento generato il 09/07/20 alle ore 13:55:45