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Titolo:
Determination of localized states in porous silicon
Autore:
Matsumoto, T; Qi, JF; Masumoto, Y; Mimura, H; Koshida, N;
Indirizzi:
Japankici & Technol Corp, ERATO, Single Quantum Dot Project, Tsukuba, Ibara Japan Sci & Technol Corp Tsukuba Ibaraki Japan 3002635 ct, Tsukuba, Ibara Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan Univ Tsukuba Tsukuba Ibaraki Japan 3058571 sukuba, Ibaraki 3058571, Japan Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan Tohoku Univ Sendai Miyagi Japan 9808577 st, Sendai, Miyagi 9808577, Japan TokyoJapan Agr & Technol, Dept Elect & Elect Engn, Koganei, Tokyo 1848588,Tokyo Univ Agr & Technol Koganei Tokyo Japan 1848588 anei, Tokyo 1848588,
Titolo Testata:
JOURNAL OF LUMINESCENCE
fascicolo: 1-4, volume: 80, anno: 1998,
pagine: 203 - 206
SICI:
0022-2313(199812)80:1-4<203:DOLSIP>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
LIMITED CURRENT MEASUREMENTS; QUANTUM EFFICIENCY; AMORPHOUS-SILICON; BAND-GAP; DENSITY; ELECTROLUMINESCENCE; TRAPS;
Keywords:
porous silicon; space-charge-limited-current density of state; Fermi level;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Matsumoto, T Japan Sci & Technol Corp, ERATO, Single Quantum Dot Project, 5-9-9 Tokodai, Japan Sci & Technol Corp 5-9-9 Tokodai Tsukuba Ibaraki Japan3002635
Citazione:
T. Matsumoto et al., "Determination of localized states in porous silicon", J LUMINESC, 80(1-4), 1998, pp. 203-206

Abstract

We determined the density of state distribution near the Fermi level in porous silicon from the analysis of the current-voltage (J-V) and the current-thickness (J-T) characteristics in the space-charge-limited-current (SCLC)regime. The distribution exhibits a minimum density at the Fermi level which is similar to the U-shape-trap-distribution observed in crystalline Si-SiO2 interface or in amorphous Si. Theoretical analysis well explains both the J-V and the J-T characteristics, which implies that the current flow is entirely controlled by localized states situated at the quasi-Fermi level. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 06/04/20 alle ore 00:36:33