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Titolo:
High surface area silicon carbide doped with zirconium for use as catalystsupport. Preparation, characterization and catalytic application
Autore:
Pham-Huu, C; Bouchy, C; Dintzer, T; Ehret, G; Estournes, C; Ledoux, MJ;
Indirizzi:
Univ Strasbourg 1, ECPM, Lab Chim Mat Catalyt, F-67008 Strasbourg, France Univ Strasbourg 1 Strasbourg France F-67008 , F-67008 Strasbourg, France Univasbourg,urg 1, IPCMS, UMR 46 CNRS, Grp Surface & Interface, F-67037 Str Univ Strasbourg 1 Strasbourg France F-67037 ace & Interface, F-67037 Str UnivFrancebourg 1, ECPM, UMR 46 CNRS, Grp Mat Inorgan, F-67037 Strasbourg,Univ Strasbourg 1 Strasbourg France F-67037 Inorgan, F-67037 Strasbourg,
Titolo Testata:
APPLIED CATALYSIS A-GENERAL
fascicolo: 1-2, volume: 180, anno: 1999,
pagine: 385 - 397
SICI:
0926-860X(19990419)180:1-2<385:HSASCD>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
N-HEPTANE; ISOMERIZATION; ALUMINA; OXIDE; HYDROISOMERIZATION; HYDROCRACKING; HYDROGENATION; TEMPERATURE; ALKOXIDES; MECHANISM;
Keywords:
silicon carbide; characterization; molybdenum oxycarbide; zirconium;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
30
Recensione:
Indirizzi per estratti:
Indirizzo: Ledoux, MJ Univ Strasbourg 1, ECPM, Lab Chim Mat Catalyt, 1 Rue Blaise Pascal, F-67008 Univ Strasbourg 1 1 Rue Blaise Pascal Strasbourg France F-67008
Citazione:
C. Pham-Huu et al., "High surface area silicon carbide doped with zirconium for use as catalystsupport. Preparation, characterization and catalytic application", APP CATAL A, 180(1-2), 1999, pp. 385-397

Abstract

Zirconium doped SiC with a surface area from 88 to 200 m(2) g(-1) was synthesized using the shape memory concept method followed by calcination in air at a temperature of less than or equal to 480 degrees C. The material obtained was composed of beta-SiC and small ZrO2 particles dispersed throughout the material matrix and a significant amount of an amorphous phase containing Si, Zr and O, Molybdenum oxycarbide, the active isomerization phase, supported on such a material displayed a similar behavior to that obtained on pure SiC for the n-heptane isomerization reaction. A comparison made withthe molybdenum oxycarbide catalyst supported on pure ZrO2 showed that the Zr doped SiC was not simply made of silicon carbide coated with a layer of ZrO2 on the surface but probably an amorphous phase containing Si, Zr and Owhich displays a similar behavior as pure SiC. (C) 1999 Elsevier Science B. V. All rights reserved.

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Documento generato il 28/11/20 alle ore 09:55:52