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Titolo:
Influence of steps and defects on the dissociative adsorption of molecularhydrogen on silicon surfaces
Autore:
Raschke, MB; Hofer, U;
Indirizzi:
Max Planck Inst Quantum Opt, D-85740 Garching, Germany Max Planck Inst Quantum Opt Garching Germany D-85740 0 Garching, Germany Tech Univ Munich, Dept Phys, D-85747 Garching, Germany Tech Univ Munich Garching Germany D-85747 hys, D-85747 Garching, Germany
Titolo Testata:
APPLIED PHYSICS B-LASERS AND OPTICS
fascicolo: 3, volume: 68, anno: 1999,
pagine: 649 - 655
SICI:
0946-2171(199903)68:3<649:IOSADO>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING TUNNELING MICROSCOPY; PHONON-ASSISTED STICKING; REACTION DYNAMICS; SI(100) SURFACES; DETAILED BALANCE; SI(001) SURFACES; VICINAL SI(100); D-2 ADSORPTION; H-2 DESORPTION; PHASE-DIAGRAM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
45
Recensione:
Indirizzi per estratti:
Indirizzo: Raschke, MB Max Planck Inst Quantum Opt, D-85740 Garching, Germany Max Planck Inst Quantum Opt Garching Germany D-85740 Germany
Citazione:
M.B. Raschke e U. Hofer, "Influence of steps and defects on the dissociative adsorption of molecularhydrogen on silicon surfaces", APP PHYS B, 68(3), 1999, pp. 649-655

Abstract

The dissociative adsorption of molecular hydrogen on vicinal Si(001) and Si(111) surfaces was investigated by means of optical second-harmonic generation (SHG). For temperatures up to 600 K the measured initial sticking coefficients could be decomposed into contributions from step/defect and terrace sites. Whereas the presence of steps on Si(111) leads only to a moderate increase of reactivity, the sticking coefficients for step adsorption on misoriented Si(001) are many orders of magnitude higher than for terrace adsorption and reach values up to 10(-4). Neither the absolute values nor the temperature dependence of adsorption on the terraces are affected by the misorientation.

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Documento generato il 30/11/20 alle ore 10:00:41