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Titolo:
Spontaneous pattern formation on ion bombarded Si(001)
Autore:
Erlebacher, J; Aziz, MJ; Chason, E; Sinclair, MB; Floro, JA;
Indirizzi:
Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA Harvard Univ Cambridge MA USA 02138 n & Appl Sci, Cambridge, MA 02138 USA Sandia Natl Labs, Albuquerque, NM 87185 USA Sandia Natl Labs Albuquerque NM USA 87185 Labs, Albuquerque, NM 87185 USA
Titolo Testata:
PHYSICAL REVIEW LETTERS
fascicolo: 11, volume: 82, anno: 1999,
pagine: 2330 - 2333
SICI:
0031-9007(19990315)82:11<2330:SPFOIB>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
SURFACE SELF-DIFFUSION; ROUGHENING INSTABILITY; RIPPLE STRUCTURE; SI; MECHANISMS; EVOLUTION; DIMERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Erlebacher, J Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA Harvard Univ Cambridge MA USA 02138 Cambridge, MA 02138 USA
Citazione:
J. Erlebacher et al., "Spontaneous pattern formation on ion bombarded Si(001)", PHYS REV L, 82(11), 1999, pp. 2330-2333

Abstract

Spectroscopic light scattering was used to monitor periodic ripple evolution on Si(001) in situ during Ar+ sputtering. Analysis indicates that under high flux the concentration of mobile species on the surface is temperatureand ion flux independent. This is due to an effect of ion collision cascades on the concentration of mobile species. We thereby measure the migrationenergy on the surface to be 1.2 +/- 0.1 eV. The technique is generalizableto any material, including high temperature and insulating materials for which surface migration energies are notoriously difficult to measure.

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Documento generato il 03/12/20 alle ore 06:08:11