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Titolo:
Deposition of high critical-temperature superconductor YBa2Cu3O7-x, epitaxial thick film by hot cluster epitaxy
Autore:
Hattori, T; Yamaguchi, N; Majima, T; Terashima, K; Yoshida, T;
Indirizzi:
Univ Tokyo, Grad Sch, Dept Met & Mat Sci, Tokyo 1138656, Japan Univ TokyoTokyo Japan 1138656 Dept Met & Mat Sci, Tokyo 1138656, Japan Univ Tokyo, Grad Sch, Fac Engn, Tokyo 1138656, Japan Univ Tokyo Tokyo Japan 1138656 Grad Sch, Fac Engn, Tokyo 1138656, Japan
Titolo Testata:
JOURNAL OF THE JAPAN INSTITUTE OF METALS
fascicolo: 1, volume: 63, anno: 1999,
pagine: 68 - 73
SICI:
0021-4876(199901)63:1<68:DOHCSY>2.0.ZU;2-C
Fonte:
ISI
Lingua:
JPN
Soggetto:
PLASMA FLASH EVAPORATION;
Keywords:
plasma flash evaporation method; nanometer-scale cluster; hot cluster epitaxy; yttrium-based superconductor; charged cluster; epitaxial thick film; high deposition rate;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Hattori, T Toshiba Corp, Kawasaki, Kanagawa, Japan Toshiba Corp Kawasaki Kanagawa Japan awasaki, Kanagawa, Japan
Citazione:
T. Hattori et al., "Deposition of high critical-temperature superconductor YBa2Cu3O7-x, epitaxial thick film by hot cluster epitaxy", J JPN METAL, 63(1), 1999, pp. 68-73

Abstract

Hot cluster epitaxy (HCE) is a novel high-rate epitaxial growth mechanism discovered in the study of the plasma flash evaporation method. In HCE, themain deposition species are thermally activated, nanometer-scale clusters (hot clusters), which have unique characteristics such as high internal energy and high sticking probability even at high substrate temperature. Actually, with HCE, deposition of YBa2Cu3O7-x epitaxial films at a growth rate of 16 nm/s on the SrTiO3 substrate has been achieved. However, films thickerthan 2 mu m could not be obtained so far. In this paper, we discuss the "charge-up" effect of clusters and insulating substrates in a plasma environment as a retarding factor for film growth. Probe measurements and the biasing deposition clarified the charge-up of clusters were charged up during deposition. It was found that more than 60% of the clusters were negatively charged. By using conductive substrates of Nb doped SrTiO3, or changing Ar composition in Ar-O-2 plasma, we could deposit monolayer-smooth epitaxial YBa2Cu3O7-x, films thicker than 3 mu m, with excellent properties; the full width less than 0.14 degrees at half maximum of the X-ray rocking curve of the (005) peak, and the superconducting transition temperature of 92 K. These results suggest the future role of BCE in epitaxial thick film deposition.

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Documento generato il 26/09/20 alle ore 03:19:21