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Titolo:
Transverse-junction-stripe GaAs-AlGaAs lasers for squeezed light generation
Autore:
Lathi, S; Tanaka, K; Morita, T; Inoue, S; Kan, H; Yamamoto, Y;
Indirizzi:
Stanfordord,v, Edward L Ginzton Lab, ERATO, Quantum Fluctuat Project, Stanf Stanford Univ Stanford CA USA 94305 RATO, Quantum Fluctuat Project, Stanf Hamamatsu Photon KK, Cent Res Lab, Hamamatsu, Shizuoka, Japan Hamamatsu Photon KK Hamamatsu Shizuoka Japan Hamamatsu, Shizuoka, Japan Nihon Univ, Coll Sci & Technol, Atom Energy Res Inst, Tokyo 1018305, JapanNihon Univ Tokyo Japan 1018305 tom Energy Res Inst, Tokyo 1018305, Japan NTT, Basic Res Labs, Kanagawa, Japan NTT Kanagawa JapanNTT, Basic Res Labs, Kanagawa, Japan
Titolo Testata:
IEEE JOURNAL OF QUANTUM ELECTRONICS
fascicolo: 3, volume: 35, anno: 1999,
pagine: 387 - 394
SICI:
0018-9197(199903)35:3<387:TGLFSL>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
SEMICONDUCTOR-LASERS; PARTITION NOISE;
Keywords:
amplitude-squeezed light; DX centers and intensity noise of laser; saturable absorption in TJS lasers; semiconductor lasers; subshot-noise light; TSJ lasers;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Lathi, S Stanfordord,v, Edward L Ginzton Lab, ERATO, Quantum Fluctuat Project, Stanf Stanford Univ Stanford CA USA 94305 ntum Fluctuat Project, Stanf
Citazione:
S. Lathi et al., "Transverse-junction-stripe GaAs-AlGaAs lasers for squeezed light generation", IEEE J Q EL, 35(3), 1999, pp. 387-394

Abstract

We fabricated 850-nm GaAs transverse-junction-stripe (TJS) lasers by an improved metal-organic chemical vapor deposition (MOCVD) and double Zn diffusion process. The high V/III ratio used during the MOCVD growth significantly reduced the intermixing of GaAs active layer and AlGaAs cladding layers. The modified process realized good confinement for both carriers and photons and smaller saturable loss. We measured squeezing of -2.8 dB (-4.5 dB after correction for detection efficiency) at a pumping rate of I/I-th approximate to 20 from these lasers, which is in close agreement with the theoretical limit. This squeezing remained unchanged under injection locking, indicating almost perfect conservation of the intensity noise correlation among the longitudinal modes. These TJS lasers had very small low-frequency 1/f noise.

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Documento generato il 25/11/20 alle ore 08:31:08