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Titolo:
The two-dimensional lateral injection in-plane laser
Autore:
North, A; Burroughes, J; Burke, T; Shields, A; Norman, CE; Pepper, M;
Indirizzi:
Univndambridge, Cavendish Lab, Semicond Phys Dept, Cambridge CB3 0HE, Engla Univ Cambridge Cambridge England CB3 0HE Dept, Cambridge CB3 0HE, Engla Toshiba Cambridge Res Ctr, Cambridge CB4 4WE, England Toshiba Cambridge Res Ctr Cambridge England CB4 4WE dge CB4 4WE, England
Titolo Testata:
IEEE JOURNAL OF QUANTUM ELECTRONICS
fascicolo: 3, volume: 35, anno: 1999,
pagine: 352 - 357
SICI:
0018-9197(199903)35:3<352:TTLIIL>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; GAAS/ALGAAS QUANTUM WELLS; DOPED HETEROSTRUCTURE; SUBSTRATE; GAAS; TEMPERATURE; MODULATION; DEPENDENCE; OPERATION; INTERFACE;
Keywords:
charge injection; hot carriers; quantum-well lasers; semiconductor device doping; semiconductor junctions; ultrafast electronics;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: North, A Univndambridge, Cavendish Lab, Semicond Phys Dept, Cambridge CB3 0HE, Engla Univ Cambridge Cambridge England CB3 0HE mbridge CB3 0HE, Engla
Citazione:
A. North et al., "The two-dimensional lateral injection in-plane laser", IEEE J Q EL, 35(3), 1999, pp. 352-357

Abstract

In this paper, a two-dimensional (2-D) p-n junction was used for population inversion in a GaAs quantum-well laser. The device, incorporating modulation doping within the core of a separate confinement heterostructure, was designed to exploit the amphoteric behavior of silicon in GaAs [doping p-type on (311)A facets and n-type on (100)]. It is believed to be the first lasing de,ice to use an amphoterically doped junction for population inversion. In the first attempted design (described here), CW lasing was achieved attemperatures up to 90 K. The factors affecting the temperature dependence of threshold are discussed in the context of possible design improvements, The device may eventually show improved modulation bandwidth over conventional vertical injection lasers with bulk contacts, since its geometry and the 2-D nature of the injection offer reduced capacitance, HEMT integration, and an elimination of carrier capture problems.

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Documento generato il 22/09/20 alle ore 17:01:41