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Titolo:
Determination of thin film growth mechanisms of deposited metal oxides by a combined use of ISS and XPS
Autore:
Jimenez, VM; Espinos, JP; Gonzalez-Elipe, AR;
Indirizzi:
Univ Sevilla, CSIC, Inst Ciencia Mat Sevilla, Seville 41092, Spain Univ Sevilla Seville Spain 41092 encia Mat Sevilla, Seville 41092, Spain Fac Quim Seville, Dept Quim Inorgan, Seville 41092, Spain Fac Quim Seville Seville Spain 41092 Quim Inorgan, Seville 41092, Spain
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 1-2, volume: 141, anno: 1999,
pagine: 186 - 192
SICI:
0169-4332(199903)141:1-2<186:DOTFGM>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
ENERGY ION-SCATTERING;
Keywords:
XPS; ISS; thin film growth; layer formation mechanism; oxide thin film;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Gonzalez-Elipe, AR Univvillella, CSIC, Inst Ciencia Mat Sevilla, Avda Americo Vespucio S-N, Se Univ Sevilla Avda Americo Vespucio S-N Seville Spain 41092
Citazione:
V.M. Jimenez et al., "Determination of thin film growth mechanisms of deposited metal oxides by a combined use of ISS and XPS", APPL SURF S, 141(1-2), 1999, pp. 186-192

Abstract

A mathematical formalism has been developed to describe the evolution of the intensity of ion scattering spectroscopy (ISS) against X-ray photoelectron spectroscopy (XPS) peaks when a thin film is deposited on a flat substrate. The formalism permits to differentiate layer by layer from island growth mechanisms and provide an approximate value of the thickness of a homogeneous layer of the deposited film. The model has been applied to study the deposition of oxide thin films (SnO, SnO2, CoO, Co3O4) on substrates of other oxide materials (MgO, SiO2). (C) 1999 Published by Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 22:28:36