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Titolo:
A 200 nm x 2 mm array of organic light-emitting diodes and their anisotropic electroluminescence
Autore:
Suganuma, N; Adachi, C; Koyama, T; Taniguchi, Y; Shiraishi, H;
Indirizzi:
Shinshu Univ, Dept Funct Polymer Sci, Nagano 3868567, Japan Shinshu Univ Nagano Japan 3868567 nct Polymer Sci, Nagano 3868567, Japan Hitachi Co Ltd, Cent Res Lab, Tokyo 1858601, Japan Hitachi Co Ltd Tokyo Japan 1858601 d, Cent Res Lab, Tokyo 1858601, Japan
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 9, volume: 74, anno: 1999,
pagine: 1206 - 1208
SICI:
0003-6951(19990301)74:9<1206:A2NX2M>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
POLARIZED ELECTROLUMINESCENCE; POLYMER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Suganuma, N Shinshu Univ, Dept Funct Polymer Sci, Nagano 3868567, Japan Shinshu Univ Nagano Japan 3868567 Sci, Nagano 3868567, Japan
Citazione:
N. Suganuma et al., "A 200 nm x 2 mm array of organic light-emitting diodes and their anisotropic electroluminescence", APPL PHYS L, 74(9), 1999, pp. 1206-1208

Abstract

We demonstrated the fabrication of a 200 nmX2 mm array of organic light-emitting diodes (OLEDs) on a glass substrate. The photolithographic techniqueusing an optical phase shift mask allowed us to construct a super-fine resolution patterning of OLEDs. A single organic electroluminescent (EL) layercomposed of an inert poly(methylmethacrylate) polymer binder and tetraphenylbendidine and tris(8-quinolinol) aluminum molecules was fabricated on a fine-resolution photoresist patterning by a spin coating method. The lines and spaces of the photoresist patterning were 200 nm. The emitting area was well confined by the regular array of residual photoresist resin walls. Finally, a MgAg cathode layer was uniformly deposited on the organic layer. Weobserved anisotropic EL spectra between the directions perpendicular and parallel to the patterning of OLED arrays. Furthermore, we observed a large difference of EL intensities between them. We assume that the anisotropic EL characteristics are caused by the confinement effect of photons inside the submicrometer-sized OLED array. (C) 1999 American Institute of Physics. [S0003-6951(99)02709-6].

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Documento generato il 19/02/20 alle ore 14:58:53