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Titolo:
Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates
Autore:
Xu, ZL; Xu, WJ; Li, L; Yang, CQ; Liu, R; Liu, HD;
Indirizzi:
Pekinghinav, Natl Lab Mesoscop Phys, Dept Phys, Beijing 100871, Peoples R C Peking Univ Beijing Peoples R China 100871 , Beijing 100871, Peoples R C Elect Mat Res Inst, Tianjin 300192, Peoples R China Elect Mat Res Inst Tianjin Peoples R China 300192 00192, Peoples R China
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 338, anno: 1999,
pagine: 220 - 223
SICI:
0040-6090(19990129)338:1-2<220:LPEGOA>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Keywords:
semiconductors; liquid phase epitaxy; aluminum; gallium arsenide;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
3
Recensione:
Indirizzi per estratti:
Indirizzo: Xu, ZL Pekinghinav, Natl Lab Mesoscop Phys, Dept Phys, Beijing 100871, Peoples R C Peking Univ Beijing Peoples R China 100871 ng 100871, Peoples R C
Citazione:
Z.L. Xu et al., "Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates", THIN SOL FI, 338(1-2), 1999, pp. 220-223

Abstract

A new semiconductor III-V five-element alloy AlGaInPAs had been grown successfully by liquid phase epitaxy (LPE). All our samples had mirror-like, flat, surfaces, X-ray double crystal diffraction, PL spectra and Hall measurements show that all our AlGaInPAs/GaAs samples had goad quality. The lattice-mismatch between AlGaInPAs epitaxial layer and GaAs substrate was better than 10(-3), FWHM values of PL peaks of our our samples were about 50 meV and the epitaxial layers were n type. The carrier concentration was about 4.4 x 10(15) cm(-3) and the mobility, about 900 cm(2)/Vs. The variation of composition along the direction of growth was also very small. (C) 1999 Elsevier Science S.A. All rights reserved.

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Documento generato il 14/07/20 alle ore 19:53:03