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Titolo:
Ripple structure on metal surfaces induced by ion sputtering
Autore:
Rusponi, S; Boragno, C; Valbusa, U;
Indirizzi:
Univ Genoa, CFSBT, I-16136 Genoa, Italy Univ Genoa Genoa Italy I-16136Univ Genoa, CFSBT, I-16136 Genoa, Italy Univ Genoa, INFM, Dipartimento Fis, I-16136 Genoa, Italy Univ Genoa Genoa Italy I-16136 M, Dipartimento Fis, I-16136 Genoa, Italy
Titolo Testata:
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
, volume: 12, anno: 1998,
pagine: 55 - 63
SICI:
0204-3467(1998)12:<55:RSOMSI>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING-TUNNELING-MICROSCOPY; BOMBARDED SI; ROUGHENING INSTABILITY; TOPOGRAPHY; DIFFUSION; GROWTH; ROUGHNESS; SCALE; STM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
43
Recensione:
Indirizzi per estratti:
Indirizzo: Rusponi, S Univ Genoa, CFSBT, Via Dodecaneso 33, I-16136 Genoa, Italy UnivGenoa Via Dodecaneso 33 Genoa Italy I-16136 Genoa, Italy
Citazione:
S. Rusponi et al., "Ripple structure on metal surfaces induced by ion sputtering", PHYS LOW-D, 12, 1998, pp. 55-63

Abstract

A review of ripple formation on solid surfaces induced by ion sputtering is presented. We review in detail very recent development in this field showing that the ripple morphology, generated by ion bombardment at normal incidence on (110) metal surfaces, is a consequence of the effect both of a Schwoebel barrier on inter-layer diffusion processes and of the anisotropic intra-layer mass transport which generates a ripple instability which can overcome the one due to ion erosion.

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Documento generato il 03/12/20 alle ore 05:15:28