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Titolo:
Annealing and synchrotron radiation irradiation effects on hydrogen terminated Si(100) surfaces investigated by infrared reflection absorption spectroscopy
Autore:
Hirano, S; Noda, H; Yoshigoe, A; Gheyas, SI; Urisu, T;
Indirizzi:
Grad Univ Adv Studies, Inst Mol Sci, Okazaki, Aichi 4448585, Japan Grad Univ Adv Studies Okazaki Aichi Japan 4448585 i, Aichi 4448585, Japan Inst Mol Sci, Dept Vacuum UV Photosci, Okazaki, Aichi 4448585, Japan Inst Mol Sci Okazaki Aichi Japan 4448585 i, Okazaki, Aichi 4448585, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 12B, volume: 37, anno: 1998,
pagine: 6991 - 6995
SICI:
0021-4922(199812)37:12B<6991:AASRIE>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; BURIED METAL LAYER; SILICON SURFACES; ATOMIC-HYDROGEN; DESORPTION; ADSORPTION; MONOHYDRIDE; HYDRIDES; PHASE;
Keywords:
hydrogen; Si(100) surface; infrared reflection absorption spectroscopy; etching; annealing; synchrotron radiation;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Hirano, S Grad Univ Adv Studies, Inst Mol Sci, Okazaki, Aichi 4448585, Japan Grad Univ Adv Studies Okazaki Aichi Japan 4448585 448585, Japan
Citazione:
S. Hirano et al., "Annealing and synchrotron radiation irradiation effects on hydrogen terminated Si(100) surfaces investigated by infrared reflection absorption spectroscopy", JPN J A P 1, 37(12B), 1998, pp. 6991-6995

Abstract

The structure of the H or D saturation adsorbed Si(100)1 x 1 surface generated at 400 K, and its change by annealing and synchrotron radiation (SR) irradiation were investigated by infrared reflection absorption spectroscopy(IRRAS) using a CoSi2 buried metal layer (BML) substrate and reflection high-energy electron diffraction (RHEED) measurements. On 650 K annealing, the D saturation adsorbed Si(100)1 x 1 surface changes to 2 x 1 structure consisting of only D-Si-Si-D, which gives rise to an SiD stretching vibration band with a sharp, symmetric shape that peaked at around 1525 cm(-1). If the SR irradiation is added to the annealing of the D saturation adsorbed Si(100)1 x 1 surface, the shape of the SiD stretching vibration band at 1525 cm(-1) after 650 K annealing becomes broad and asymmetric. This is explainedby the fact that D-Si-D is etched (desorbed) by the SR irradiation.

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Documento generato il 01/10/20 alle ore 05:48:35