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Titolo:
Pulsed laser deposition of lithium niobate: a parametric study
Autore:
Ghica, D; Ghica, C; Gartner, M; Nelea, V; Martin, C; Cavaleru, A; Mihailescu, IN;
Indirizzi:
Natl Inst Optoelect, Bucharest 76900, Romania Natl Inst Optoelect Bucharest Romania 76900 ct, Bucharest 76900, Romania IPCMS, GSI, F-67037 Strasbourg, France IPCMS Strasbourg France F-67037IPCMS, GSI, F-67037 Strasbourg, France Romanian Acad, Inst Phys Chem, Bucharest 77208, Romania Romanian Acad Bucharest Romania 77208 hys Chem, Bucharest 77208, Romania ENSAIS, F-67084 Strasbourg, France ENSAIS Strasbourg France F-67084ENSAIS, F-67084 Strasbourg, France Natl Inst Laser Plasma & Radiat Phys, Bucharest 76900, Romania Natl Inst Laser Plasma & Radiat Phys Bucharest Romania 76900 00, Romania
Titolo Testata:
APPLIED SURFACE SCIENCE
, volume: 139, anno: 1999,
pagine: 617 - 621
SICI:
0169-4332(199901)139:<617:PLDOLN>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
LINBO3 THIN-FILMS; GROWTH; GAS;
Keywords:
pulsed laser deposition; LiNbO3 thin films;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Ghica, D Natl Inst Optoelect, POB MG-5, Bucharest 76900, Romania Natl InstOptoelect POB MG-5 Bucharest Romania 76900 00, Romania
Citazione:
D. Ghica et al., "Pulsed laser deposition of lithium niobate: a parametric study", APPL SURF S, 139, 1999, pp. 617-621

Abstract

We report the deposition of high optical quality LiNbO3 thin films on Si(lll) substrates by pulsed laser ablation using a KrF* excimer laser (lambda = 248 nm, tau = 20 ns) source. Experiments have been conducted in oxygen at5-20 Pa. Si(lll) collectors were uniformly heated at 500-700 degrees C. Some of the as-deposited collectors were submitted to an in-situ thermal treatment in oxygen (10(3)-10(4) Pa) at the same temperature. The deposited thin films were characterised by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM) and spectroscopic ellipsometry (SE). Our LiNbO3 thin films, achieved at relatively low temperature (550 degreesC), are the first textured and high optical quality pulsed laser depositedfilms on Si. (C) 1999 Elsevier Science B.V. All rights reserved.

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Documento generato il 29/09/20 alle ore 03:43:14