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Titolo:
High rate deposition of ta-C : H using an electron cyclotron wave resonance plasma source
Autore:
Morrison, NA; Rodil, SE; Ferrari, AC; Robertson, J; Milne, WI;
Indirizzi:
Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England Univ Cambridge Cambridge England CB2 1PZ ngn, Cambridge CB2 1PZ, England
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 337, anno: 1999,
pagine: 71 - 73
SICI:
0040-6090(19990111)337:1-2<71:HRDOT:>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
TETRAHEDRAL AMORPHOUS-CARBON; RAMAN-SPECTRA; FILMS;
Keywords:
electron cyclotron wave resonance; tetrahedral amorphous carbon; high rate deposition;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Robertson, J Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England Univ Cambridge Cambridge England CB2 1PZ e CB2 1PZ, England
Citazione:
N.A. Morrison et al., "High rate deposition of ta-C : H using an electron cyclotron wave resonance plasma source", THIN SOL FI, 337(1-2), 1999, pp. 71-73

Abstract

A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 1.5 nm/s over a 4-inch diameter and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the sourer gas and was characterized as having an sp(3) content of up to 77%, plasmon energy of 27 eV, refractive index of 2.45, hydrogen content of about 30%, optical gap of up to 2.1 eV and RMS surface roughness of 0.04 nm. (C) 1999 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/09/20 alle ore 04:28:10