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Titolo:
The control of the high-density microwave plasma for large-area electronics
Autore:
Shirai, H; Sakuma, Y; Ueyama, H;
Indirizzi:
Saitama Univ, Fac Engn, Dept Funct Mat Sci, Urawa, Saitama 3388570, Japan Saitama Univ Urawa Saitama Japan 3388570 i, Urawa, Saitama 3388570, Japan Nihon Koshuha Co Ltd, Midori Ku, Kanagawa 2260011, Japan Nihon Koshuha Co Ltd Kanagawa Japan 2260011 Ku, Kanagawa 2260011, Japan
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 337, anno: 1999,
pagine: 12 - 17
SICI:
0040-6090(19990111)337:1-2<12:TCOTHM>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Keywords:
large-area plasma; low-electron temperature; high-density plasma; microwave plasma; spokewise antenna; mu c-Si : H; SiH2Cl2; high rate deposition;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Shirai, H Saitama Univ, Fac Engn, Dept Funct Mat Sci, 255 Shimo Okubo, Urawa, Saitama Saitama Univ 255 Shimo Okubo Urawa Saitama Japan 3388570 Saitama
Citazione:
H. Shirai et al., "The control of the high-density microwave plasma for large-area electronics", THIN SOL FI, 337(1-2), 1999, pp. 12-17

Abstract

A uniform, low-temperature, and high-density microwave plasma (2.45 GHz) is produced without magnetic field, utilizing a spokewise antenna. The plasma maintains a uniform state in Ar low pressure of several 10 mTorr with high electron density, >10(11) cm(-3), and a temperature Less than 2.5 eV within +/-6% over 16 cm in diameter. Highly crystallized and photoconductive, hydrogenated microcrystalline silicon (mu c-Si:H) film is produced from dichlorosilane (SiH:Cl-2), H-2 and Ar mixture at high deposition rate of mon than 5 Angstrom/s. This low-temperature and high-density microwave plasma source has a high potential not only for etching but for future large-area film deposition processes. (C) 1999 Elsevier Science S.A. All rights reserved.

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Documento generato il 26/09/20 alle ore 03:54:33