Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications
Autore:
Bera, LK; Ray, SK; Nayak, DK; Usami, N; Shiraki, Y; Maiti, CK;
Indirizzi:
Indianngal, Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Be Indian Inst Technol Kharagpur W Bengal India 721302 haragpur 721302, W Be Altera Corp, Fremont, CA 94555 USA Altera Corp Fremont CA USA 94555Altera Corp, Fremont, CA 94555 USA Univ Tokyo, RCAST, Meguro Ku, Tokyo 153, Japan Univ Tokyo Tokyo Japan 153 niv Tokyo, RCAST, Meguro Ku, Tokyo 153, Japan
Titolo Testata:
JOURNAL OF ELECTRONIC MATERIALS
fascicolo: 2, volume: 28, anno: 1999,
pagine: 98 - 104
SICI:
0361-5235(199902)28:2<98:GSMBEG>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOBILITY ENHANCEMENT; ELECTRON-MOBILITY; BAND OFFSETS; HETEROSTRUCTURES; LAYER; DISCONTINUITIES; SUPERLATTICES; SPECTROSCOPY; DEVICE; FIELD;
Keywords:
band offset; heterostructure MOSFET; gas source molecular beam epitaxy (GSMBE); silicon-germanium; strained-Si;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
37
Recensione:
Indirizzi per estratti:
Indirizzo: Bera, LK Indianngal, Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Be Indian Inst Technol Kharagpur W Bengal India 721302 721302, W Be
Citazione:
L.K. Bera et al., "Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications", J ELEC MAT, 28(2), 1999, pp. 98-104

Abstract

Gas source molecular beam epitaxy has been employed for the growth of a high quality strained-Si layer on a completely relaxed step-graded Si1-xGex buffer layer. As-grown strained-Si layers have been characterized using secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, atomicforce microscopy, and spectroscopic ellipsometry for the determination of composition, thickness, crystalline quality, and surface roughness. Heterojunction conduction and valence band offsets (Delta E-c, Delta E-v) of strained-Si/SiGe heterostructure have been determined from measured threshold voltages of a strained-Si channel p-metal oxide semiconductor field effect transistor (MOSFET) fabricated using grown films. MOS capacitance-voltage profiling has been employed for the extraction of strained-Si layer thickness and apparent doping profile in the device.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 14/07/20 alle ore 12:15:32