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Titolo:
Selective-area formation of Si microstructures using ultrathin SiO2 mask layers
Autore:
Yasuda, T; Hwang, DS; Park, JW; Ikuta, K; Yamasaki, S; Tanaka, K;
Indirizzi:
Joint Res Ctr Atom Technol, Ibaraki, Osaka 3058562, Japan Joint Res Ctr Atom Technol Ibaraki Osaka Japan 3058562 aka 3058562, Japan Natl Ctr Adv Interdisciplinary Res, Ibaraki, Osaka 3058562, Japan Natl CtrAdv Interdisciplinary Res Ibaraki Osaka Japan 3058562 562, Japan Angstrom Technol Partnership, Ibaraki, Osaka 3050046, Japan Angstrom Technol Partnership Ibaraki Osaka Japan 3050046 a 3050046, Japan
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 5, volume: 74, anno: 1999,
pagine: 653 - 655
SICI:
0003-6951(19990201)74:5<653:SFOSMU>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL-GROWTH; SILICON EPITAXY; NUCLEATION; PRESSURE; SILANE; OXIDE; FILMS; SI2H6; CL-2;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Yasuda, T Joint Res Ctr Atom Technol, 1-1-4 Higashi, Ibaraki, Osaka 3058562, Japan Joint Res Ctr Atom Technol 1-1-4 Higashi Ibaraki Osaka Japan 3058562
Citazione:
T. Yasuda et al., "Selective-area formation of Si microstructures using ultrathin SiO2 mask layers", APPL PHYS L, 74(5), 1999, pp. 653-655

Abstract

We have developed a technique to form Si microstructures at preassigned positions on Si substrates. The key element of this technique is resistless patterning of ultrathin SiO2 mask layers by direct electron-beam exposure. Selective-area growth of Si was accomplished by two different chemistries: flow-modulated plasma-enhanced chemical vapor deposition (CVD) at 473 K or ultra-high-vacuum CVD at 853 K. Epitaxial deposition was achieved by the latter growth method when a mask layer with minimum thickness for deposition selectivity (approximately 0.2 nm) was employed. (C) 1999 American Instituteof Physics. [S0003-6951(99)01405-9].

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Documento generato il 23/01/20 alle ore 18:41:43