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Titolo:
STM studies of the characteristics of the surface fabrication process using chemical and electrical methods
Autore:
Wang, C; Shang, G; Qiu, X; Bai, C;
Indirizzi:
Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China Chinese Acad Sci Beijing Peoples R China 100080 100080, Peoples R China
Titolo Testata:
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
fascicolo: 2, volume: 68, anno: 1999,
pagine: 181 - 185
SICI:
0947-8396(199902)68:2<181:SSOTCO>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING TUNNELING MICROSCOPE; ATOMIC-FORCE MICROSCOPE; NANOMETER-SCALE; FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Wang, C Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China Chinese Acad Sci Beijing Peoples R China 100080 Peoples R China
Citazione:
C. Wang et al., "STM studies of the characteristics of the surface fabrication process using chemical and electrical methods", APPL PHYS A, 68(2), 1999, pp. 181-185

Abstract

In this report, we compare the characteristics of nanostructures on graphite surfaces produced by oxidation processes at high temperatures and by an electric pulse method using STM. The craters generated by the oxidation process are typically flat bottomed, indicating uniform atomic layer removals,while the electric pulse method will lead to "V"-shaped craters that couldbe associated with the electron diffusion characteristics. The studies of the fabrication experiment on a 1T-TaS2 surface using STM yielded appreciably different results. It is observed that the threshold pulse voltage is lower than that for graphite at comparable tunneling conditions. The minimum dimension of the as-produced features is appreciably larger than those on graphite. Both observations indicate higher surface instability for 1T-TaS2 as compared with graphite.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/11/20 alle ore 22:51:11