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Titolo:
Injection locking properties of a microchip laser
Autore:
Lariontsev, EG; Zolotoverkh, I; Besnard, P; Stephan, GM;
Indirizzi:
Moscow MV Lomonosov State Univ, Inst Nucl Phys, Moscow 119899, Russia Moscow MV Lomonosov State Univ Moscow Russia 119899 oscow 119899, Russia Ecolerance Sci Appl & Technol, CNRS, Lab Optron Associe, F-22305 Lannion, F Ecole Natl Sci Appl & Technol Lannion France F-22305 F-22305 Lannion, F
Titolo Testata:
EUROPEAN PHYSICAL JOURNAL D
fascicolo: 1, volume: 5, anno: 1999,
pagine: 107 - 117
SICI:
1434-6060(199901)5:1<107:ILPOAM>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
LOCKED SEMICONDUCTOR-LASER; OPTICAL-INJECTION; DIODE-LASER; RELAXATION OSCILLATIONS; NOISE PROPERTIES; INTENSITY-NOISE; LIGHT INJECTION; BISTABILITY; SIGNAL; CHAOS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
38
Recensione:
Indirizzi per estratti:
Indirizzo: Lariontsev, EG Moscow MV Lomonosov State Univ, Inst Nucl Phys, Moscow 119899, Russia Moscow MV Lomonosov State Univ Moscow Russia 119899 ussia
Citazione:
E.G. Lariontsev et al., "Injection locking properties of a microchip laser", EUR PHY J D, 5(1), 1999, pp. 107-117

Abstract

An injected microchip laser is theoretically studied, with the use of two models: in the first model, which is traditional, the field is represented by a single frequency component in the slowly-varying envelope approximation. In the second model, referred to as the Fabry-Perot model, two field components are considered which are respectively centered around the frequencyof an eigenmode of the injected laser and the frequency of the injected field. Computation of locking ranges, bistability do mains are performed and the results compared. They show not only an improved precision of the second model but also a necessity to use it to describe some effects such as thebistable domains in the limits of the locking domains.

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Documento generato il 07/07/20 alle ore 04:46:51