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Titolo:
Spectroscopic study of nanocrystalline TiO2 thin films grown by atomic layer deposition
Autore:
Suisalu, A; Aarik, J; Mandar, H; Sildos, I;
Indirizzi:
Tartu State Univ, Inst Phys, EE-2400 Tartu, Estonia Tartu State Univ Tartu Estonia EE-2400 Inst Phys, EE-2400 Tartu, Estonia Tartu State Univ, Inst Sci Mat, EE-2400 Tartu, Estonia Tartu State Univ Tartu Estonia EE-2400 t Sci Mat, EE-2400 Tartu, Estonia
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 336, anno: 1998,
pagine: 295 - 298
SICI:
0040-6090(199812)336:1-2<295:SSONTT>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
ANATASE TIO2; PHOTOLUMINESCENCE; FABRICATION; EXCITON;
Keywords:
nanostructures; luminescence; structural properties; titanium oxide;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Sildos, I Tartu State Univ, Inst Phys, Riia 142, EE-2400 Tartu, Estonia Tartu State Univ Riia 142 Tartu Estonia EE-2400 Tartu, Estonia
Citazione:
A. Suisalu et al., "Spectroscopic study of nanocrystalline TiO2 thin films grown by atomic layer deposition", THIN SOL FI, 336(1-2), 1998, pp. 295-298

Abstract

Photoluminescence characteristics of nanocrystalline TiO2 films grown by atomic layer deposition were studied. In dependence of growth conditions thefilms consisted of anatase, rutile and TiO2-II phases. A broad band and two sharp peaks were observed in the photoluminescence spectra measured undercontinuous-wave Ar+ laser excitation at temperatures 5-165 K. At 5 K the maximum of the broad band was at 2.24 eV in the anatase films, and at 2.37-2.40 eV in the rutile and TiO2-II films. The intensity of sharp Lines peaking at 3.31 and 3.37 eV depended on the crystal structure of the films and increased significantly after X-ray irradiation. The temperature dependence and decay times of different emission bands were also investigated. The dataobtained allowed a defect-trapped-exciton interpretation of the sharp peaks although the free-exciton origin of the 3.31 eV peak could still be argued. The broad-band emission at 2.24-2.40 eV was obviously due to self-trapped exciton recombination. (C) 1998 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/11/20 alle ore 12:10:28