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Titolo:
Coalescence of germanium islands on silicon
Autore:
Schollhorn, C; Oehme, M; Bauer, M; Kasper, E;
Indirizzi:
Univ Stuttgart, Inst Halbleitertech, D-70569 Stuttgart, Germany Univ Stuttgart Stuttgart Germany D-70569 ech, D-70569 Stuttgart, Germany
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 336, anno: 1998,
pagine: 109 - 111
SICI:
0040-6090(199812)336:1-2<109:COGIOS>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Keywords:
germanium islands; variation of temperature; high deposition rate; surface morphology; molecular beam epitaxy; atomic force microscope;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
4
Recensione:
Indirizzi per estratti:
Indirizzo: Schollhorn, C Univ Stuttgart, Inst Halbleitertech, Pfaffenwaldring 47, D-70569 Stuttgart, Univ Stuttgart Pfaffenwaldring 47 Stuttgart Germany D-70569
Citazione:
C. Schollhorn et al., "Coalescence of germanium islands on silicon", THIN SOL FI, 336(1-2), 1998, pp. 109-111

Abstract

The growth of Ge islands on Si (Stranski-Krastanov growth mode) is well known (I.N. Stranski, L.v. Krastanov, Akad. Wiss. Wien, Math.-Naturw. Kl. Abtlg. IIb 146 (1937) 797). At larger Ge coverages the islands coalesce and form a quasi two-dimensional film. We investigated this transition from island growth to quasi two-dimensional films for a rather high Ge deposition rate of 0.25 nm/s. The germanium islands were grown by molecular beam epitaxy. At mean thicknesses of 1.25 and 3.75 nm the surface morphology of Ge depositions was observed by atomic force microscopy as a function of deposition temperature. At temperatures between 500 and 550 degrees C, we confirm the 3D-island growth as expected from the Stranski-Krastanov growth mode. But below these temperatures the islands coalesce and form a continuous film (E. Kasper, H. Jorke, J. Vac. Sci. Technol. A 10(4) (1992) 1927). The wavinessof the films decrease with decreasing temperatures resulting in smooth layers at 300 degrees C growth temperature. (C) 1998 Elsevier Science S.A. Allrights reserved.

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Documento generato il 22/10/20 alle ore 09:23:37