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Titolo:
X-ray diffraction measurements in GaSb under high pressure and temperature
Autore:
Martinez-Garcia, D; Le Godec, Y; Syfosse, G; Itie, JP;
Indirizzi:
ICMUC, Ed Invest, E-46100 Valencia, Spain ICMUC Valencia Spain E-46100ICMUC, Ed Invest, E-46100 Valencia, Spain CtrFranceParis Sud, Utilisat Rayonnement Electromagnet Lab, F-91405 Orsay,Ctr Univ Paris Sud Orsay France F-91405 lectromagnet Lab, F-91405 Orsay, Univ Paris 06, DHP, PMC, F-75252 Paris, France Univ Paris 06 Paris France F-75252 s 06, DHP, PMC, F-75252 Paris, France
Titolo Testata:
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
fascicolo: 1, volume: 211, anno: 1999,
pagine: 475 - 480
SICI:
0370-1972(199901)211:1<475:XDMIGU>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHASE-TRANSITIONS; EQUATION; DIAGRAM; STATE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Martinez-Garcia, D ICMUC, Ed Invest, Pl 1,Dr Moliner 50, E-46100 Valencia,Spain ICMUC Pl 1,Dr Moliner 50 Valencia Spain E-46100 Spain
Citazione:
D. Martinez-Garcia et al., "X-ray diffraction measurements in GaSb under high pressure and temperature", PHYS ST S-B, 211(1), 1999, pp. 475-480

Abstract

The P-T phase diagram of GaSb has been studied by energy dispersive X-ray diffraction using syn chrotron radiation at pressures up to 7 GPa and temperatures up to 973 K. A detailed determination of the melting curve of the low (GaSbI) and high (GaSbII) pressure phases has been made. A slope change in the GaSbI melting curve is clearly observed, confirming the existence oftwo different liquids (LI and LII) in the melt, as reported recently by volume and electrical resistance anomalies. The GaSbI-LI-LII and GaSbI-GaSbII-LII triple point coordinates in the P-T plane are found to be (3.8 +/- 0.1GPa, 765 +/- 10 K) and (4.9 +/- 0.1 GPa, 657 +/- 10 K), respectively The GaSbI-GaSbII phase transition has also been studied. The transition pressurehas been measured from room temperature to 573 K in both upstroke and downstroke. A strong hysteresis (>4 GPa) is obtained at room temperature. The phase transition boundaries determined in the upstroke and downstroke converge both to the GaSbI-GaSbII-LII triple point position, at which the hysteresis is reduced to zero.

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Documento generato il 23/01/20 alle ore 13:16:05