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Titolo:
X-ray absorption spectroscopy applied to pressure-induced transformations of semiconductors
Autore:
Itie, JP; Briois, V; Martinez-Garcia, D; Polian, A; San-Miguel, A;
Indirizzi:
Univ Paris 06, CNRS, UMR 7602, F-75252 Paris 05, France Univ Paris 06 Paris France 05 , CNRS, UMR 7602, F-75252 Paris 05, France Univ Paris Sud, LURE, F-91405 Orsay, France Univ Paris Sud Orsay France F-91405 ris Sud, LURE, F-91405 Orsay, France Dipartimento Fis Aplicada, E-46100 Valencia, Spain Dipartimento Fis Aplicada Valencia Spain E-46100 E-46100 Valencia, Spain
Titolo Testata:
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
fascicolo: 1, volume: 211, anno: 1999,
pagine: 323 - 333
SICI:
0370-1972(199901)211:1<323:XASATP>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
HGTE; DIFFRACTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Itie, JP Univ Paris 06, CNRS, UMR 7602, T13 E4,BP 77,4 Pl Jussieu, F-75252Paris 05, Univ Paris 06 T13 E4,BP 77,4 Pl Jussieu Paris France 05 aris 05,
Citazione:
J.P. Itie et al., "X-ray absorption spectroscopy applied to pressure-induced transformations of semiconductors", PHYS ST S-B, 211(1), 1999, pp. 323-333

Abstract

X-ray absorption spectroscopy (XAS) provides information on the local environment of a given atom species and therefore is very sensitive to pressure-induced transformation, in particular when coordination changes occur. This technique allows to determine with a good accuracy the onset of phase transformations. Combined with X-ray diffraction, XAS allows to follow the evolution of the structural parameters under high pressure. The low energy part of the spectrum, related to the symmetry around the absorbing atom, is a fingerprint of the structure and can be compared to simulated spectra usingmultiple scattering calculations. For amorphous samples X-ray absorption spectroscopy remains a very efficient tool to study the local order in the sample. XAS at high pressure and high temperature using large volume cells is now available. Preliminary results on melting of Ge and CdTe are presented.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/01/20 alle ore 06:40:50