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Titolo:
Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry
Autore:
Zhou, SM; Hundhausen, M; Stark, T; Chen, LY; Ley, L;
Indirizzi:
Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA Johns Hopkins Univ Baltimore MD USA 21218 Astron, Baltimore, MD 21218 USA Univ Erlangen Nurnberg, Inst Tech Phys, D-91058 Erlangen, Germany Univ Erlangen Nurnberg Erlangen Germany D-91058 -91058 Erlangen, Germany Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China Fudan Univ Shanghai Peoples R China 200433 nghai 200433, Peoples R China Fudan Univ, TD Lee Phys Lab, Shanghai 200433, Peoples R China Fudan Univ Shanghai Peoples R China 200433 nghai 200433, Peoples R China
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
fascicolo: 1, volume: 17, anno: 1999,
pagine: 144 - 149
SICI:
0734-2101(199901/02)17:1<144:KOPSFF>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
FILMS; PTSI; PHOTOEMISSION; SI(100); GROWTH; THIN;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Zhou, SM Johns218pkins Univ, Dept Phys & Astron, 3400 N Charles St, Baltimore, MD 21 Johns Hopkins Univ 3400 N Charles St Baltimore MD USA 21218 MD 21
Citazione:
S.M. Zhou et al., "Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry", J VAC SCI A, 17(1), 1999, pp. 144-149

Abstract

III situ ellipsometry is employed to study the kinetics of Pt silicide formation by thermal annealing with constant heating rates up to 30 K/min of a10 nm platinum layer on silicon (100). From spectroscopic ellipsometry data of the initial Pt/Si, the intermediate Pt2Si, and the final PtSi phase anoptimum photon energy of 3.5 eV was chosen for the kinetic study. Characteristic changes of the ellipsometric angles are observed as a function of temperature when the reaction fronts reach a depth below the surface that is related to the absorption length of the 3.5 eV photons. From an analysis ofthese transition temperatures based on the Kissinger formalism the activation energies for the formation of Pt2Si and PtSi are obtained as 1.55 +/- 0.05 and 1.72 +/- 0.05 eV, respectively, where the error bars follow from the precision of our measurements. A comparative study for a 100 nm Pt layer on Si yields the same activation energies albeit with a higher uncertainty,indicating that this method is particularly suited for ultrathin silicides. (C) 1999 American Vacuum Society. [S0734-2101(99)04901-5].

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Documento generato il 05/04/20 alle ore 04:07:55