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Titolo:
Effect of Ti-capping thickness on the formation of an oxide-interlayer-mediated-epitaxial CoSi2 film by ex situ annealing
Autore:
Kim, GB; Kwak, JS; Baik, HK; Lee, SM;
Indirizzi:
Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea Yonsei Univ Seoul South Korea 120749 Met Engn, Seoul 120749, South Korea Kangweon Natl Univ, Dept Mat Engn, Chunchon 200701, South Korea Kangweon Natl Univ Chunchon South Korea 200701 nchon 200701, South Korea
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 3, volume: 85, anno: 1999,
pagine: 1503 - 1507
SICI:
0021-8979(19990201)85:3<1503:EOTTOT>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
GROWTH; SYSTEM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, GB Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea Yonsei UnivSeoul South Korea 120749 , Seoul 120749, South Korea
Citazione:
G.B. Kim et al., "Effect of Ti-capping thickness on the formation of an oxide-interlayer-mediated-epitaxial CoSi2 film by ex situ annealing", J APPL PHYS, 85(3), 1999, pp. 1503-1507

Abstract

A modified oxide mediated epitaxy process using a single deposition and exsitu annealing by Ti capping has been suggested in this study. It has beenshown that in the case of pure Co on SiOx-covered Si, the reaction betweenCo and Si did not occur up to 800 degrees C during ex situ annealing. However, Co silicidation occurred in the case of Ti-capped Co on SiOx-covered Si. The crystalline nature of CoSi2 formed in this case strongly depends on the Ti capping thickness. When a thin Ti capping layer of thickness less than 5 nm was used, Ti oxidation occurred nonuniformly, and the morphology ofthe surface Ti oxide layer was very rough. This caused an exposure of Co to the oxygen in the ambient, resulting in the formation of polycrystalline CoSi2 due to the suppressed Co diffusion towards the Si substrate. In the case of Ti capping thickness being more than 10 nm, however, a uniform Ti oxide surface layer, which blocks the incoming oxygen retarding Co diffusion,was formed, and it led to uniform Co diffusion into the Si substrate, resulting in epitaxial CoSi2. (C) 1999 American Institute of Physics. [S0021-8979(99)00403-X].

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Documento generato il 13/07/20 alle ore 17:45:36