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Titolo:
Deposition rate and gap filling characteristics in Cu chemical vapor deposition with trimethylvinylsilyl hexafluoro-acetylacetonate copper (I)
Autore:
Kobayashi, A; Sekiguchi, A; Okada, O;
Indirizzi:
Anelva Corp, Proc Dev Lab, Fuchu, Tokyo 1838508, Japan Anelva Corp Fuchu Tokyo Japan 1838508 ev Lab, Fuchu, Tokyo 1838508, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 12A, volume: 37, anno: 1998,
pagine: 6358 - 6363
SICI:
0021-4922(199812)37:12A<6358:DRAGFC>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Keywords:
copper; CVD; deposition rate; gap filling; partial pressure of source; Langmuir-type reaction;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Kobayashi, A Anelva Corp, Proc Dev Lab, 5-8-1 Yotsuya, Fuchu, Tokyo 1838508, Japan Anelva Corp 5-8-1 Yotsuya Fuchu Tokyo Japan 1838508 08, Japan
Citazione:
A. Kobayashi et al., "Deposition rate and gap filling characteristics in Cu chemical vapor deposition with trimethylvinylsilyl hexafluoro-acetylacetonate copper (I)", JPN J A P 1, 37(12A), 1998, pp. 6358-6363

Abstract

To obtain a low-resistivity material and good gap-filling characteristics in the interconnect metallization process for advanced ULSI devices, we investigated the deposition rate and gap-filling characteristics of Cu chemical vapor deposition. We used trimethylvinylsilyl hexafluoro-acetylacetonate copper (I) as the source at deposition temperatures from 150 to 240 degreesC and source partial pressures (P-s) from 16 to 270 Pa, The deposition rate was studied as functions of the deposition temperature and P-s. The deposition rate increased as the temperature increased, but gap filling simultaneously deteriorated under constant P-s. To obtain good gap filling, P-s should be increased, but P-s is restricted by the saturated vapor pressure. Interpretations are given for gap-filling characteristics from the viewpoint of the deposition mechanism. It is concluded that the maximum deposition rate with excellent gap filling is regulated by the source vapor pressure. Wesucceeded in satisfactorily Ailing a hole of an aspect ratio of 5.5 at 200Pa of A and at 170 degrees C with the deposition rate of 40 nm/min. To obtain the same hole filling characteristic at a deposition temperature of 180degrees C, P-s should be raised to 250 Pa and the deposition rate should be 60 nm/min.

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Documento generato il 03/07/20 alle ore 16:26:52