Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
CHARACTERISTICS OF DUAL-GATE THIN-FILM TRANSISTORS FOR APPLICATIONS IN DIGITAL RADIOLOGY
Autore:
WAECHTER D; HUANG Z; ZHAO W; BLEVIS I; ROWLANDS JA;
Indirizzi:
LITTON SYST CANADA LTD,25 CITYVIEW DR ETOBICOKE ON M9W 5A7 CANADA UNIV TORONTO,SUNNYBROOK HLTH SCI CTR N YORK ON M4N 3M5 CANADA
Titolo Testata:
Canadian journal of physics
, volume: 74, anno: 1996, supplemento:, 1
pagine: 131 - 134
SICI:
0008-4204(1996)74:<131:CODTTF>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
AMORPHOUS SELENIUM; SENSITIVITY; READOUT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
D. Waechter et al., "CHARACTERISTICS OF DUAL-GATE THIN-FILM TRANSISTORS FOR APPLICATIONS IN DIGITAL RADIOLOGY", Canadian journal of physics, 74, 1996, pp. 131-134

Abstract

A large-area flat-panel detector for digital radiology is being developed. The detector uses an array of dual-gate thin-film transistors (TFTs) to read out X-ray-generated charge produced in an amorphous selenium (a-Se) layer. The TFTs use CdSe as the semiconductor and use the bottom gate for row selection. The top gate can be divided into a ''deliberate'' gate, covering most of the channel length, and smaller ''parasitic'' gates that consist of (i) overlap of source or drain metal over the top-gate oxide, and (ii) gap regions in the metal that are covered only by the a-Se. In this paper we present the properties of dual-gate TFTs and examine the effect of both the deliberate and parasitic gates on the detector operation. Various options for controlling the top-gate potential an analyzed and discussed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/12/20 alle ore 14:19:16