Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Elements extraction of GaAs dual-gate MESFET small-signal equivalent circuit
Autore:
Deng, WK; Chu, TH;
Indirizzi:
Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ Taipei Taiwan 10617 pt Elect Engn, Taipei 10617, Taiwan
Titolo Testata:
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
fascicolo: 12, volume: 46, anno: 1998,
parte:, 2
pagine: 2383 - 2390
SICI:
0018-9480(199812)46:12<2383:EEOGDM>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
MODEL; FETS;
Keywords:
dual-gate MESFET; equivalent circuit; parameter extraction;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Deng, WK Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ Taipei Taiwan 10617 Engn, Taipei 10617, Taiwan
Citazione:
W.K. Deng e T.H. Chu, "Elements extraction of GaAs dual-gate MESFET small-signal equivalent circuit", IEEE MICR T, 46(12), 1998, pp. 2383-2390

Abstract

A procedure for the extraction of intrinsic and extrinsic elements of dual-gate MESFET (DGMESFET) small-signal equivalent circuit is described in this paper. All the elements to be used as the initial values for the optimization calculation are extracted from de and RF measurements with analytical formula, The elements of extrinsic series resistance are determined by considering the distributed channel resistance under the regions of two gates with the use of the "end resistance measurement" method, The elements of extrinsic capacitance and inductance are extracted by three-port I-matrix and Z-matrix calculation from cold measurements, The intrinsic elements of DGMESFET, which is biased properly to be two decoupled single-gate MESFET's, are directly extracted from hot measurements, The extracted element values are then optimized to fit the resulting equivalent circuit to the measured three-port S-matrix. The developed procedure gives a practical and accurate approach for DGMESFET characterization.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/01/20 alle ore 19:24:48