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Titolo:
CMOS DEVICE WITH SELF-ALIGNED SOURCE DRAIN USING AMORPHOUS-SILICON LOCAL INTERCONNECTION LAYER/
Autore:
YOON YS; BAEK KH; NAM KS;
Indirizzi:
ELECT & TELECOMMUN RES INST,YUSONG POB 106 TAEJON 305600 SOUTH KOREA
Titolo Testata:
Electronics Letters
fascicolo: 5, volume: 33, anno: 1997,
pagine: 389 - 390
SICI:
0013-5194(1997)33:5<389:CDWSSD>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Keywords:
MOSFET; CMOS INTEGRATED CIRCUITS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
5
Recensione:
Indirizzi per estratti:
Citazione:
Y.S. Yoon et al., "CMOS DEVICE WITH SELF-ALIGNED SOURCE DRAIN USING AMORPHOUS-SILICON LOCAL INTERCONNECTION LAYER/", Electronics Letters, 33(5), 1997, pp. 389-390

Abstract

A novel CMOS device, which has a self-aligned source/drain structure using an amorphous silicon local interconnection (ASLI) layer, is demonstrated. The proposed device not only has very small areas of source/drain junctions, but also has shallow junction depths much shallower than conventional structures. The capacitance reduction of the source/drain junctions significantly enhances the operating speed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/11/20 alle ore 03:32:16