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Titolo:
HALL-MOBILITY LOWERING IN UNDOPED N-TYPE BULK GAAS DUE TO CELLULAR-STRUCTURE RELATED NONUNIFORMITIES
Autore:
SIEGEL W; SCHULTE S; KUHNEL G; MONECKE J;
Indirizzi:
TU BERGAKAD FREIBERG,INST PHYS EXPT,SILBERMANNSTR 1 D-09596 FREIBERG GERMANY TU BERGAKAD FREIBERG,INST THEORET PHYS D-09596 FREIBERG GERMANY
Titolo Testata:
Journal of applied physics
fascicolo: 7, volume: 81, anno: 1997,
pagine: 3155 - 3159
SICI:
0021-8979(1997)81:7<3155:HLIUNB>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRON-MOBILITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
22
Recensione:
Indirizzi per estratti:
Citazione:
W. Siegel et al., "HALL-MOBILITY LOWERING IN UNDOPED N-TYPE BULK GAAS DUE TO CELLULAR-STRUCTURE RELATED NONUNIFORMITIES", Journal of applied physics, 81(7), 1997, pp. 3155-3159

Abstract

In undoped bulk-grown GaAs single crystals, which show a wide variation of the resistivity, a characteristic dependence of the Hall mobility on the carrier concentration with a pronounced minimum at about 1x10(10) cm(-3) is observed, By applying a standard effective medium theory it is shown that this minimum is caused by mesoscopic nonuniformities of the charge carrier concentration and not by increased scattering rates or additional scattering mechanisms as would be the standard interpretation in the case of homogeneous samples. These nonuniformities observed by high-resolution point-contact measurements are connected with the cellular structure of dislocations. (C) 1997 American Institute of Physics.

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Documento generato il 07/04/20 alle ore 02:02:56