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Titolo:
Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots
Autore:
Shao, XP; Jonczyk, R; Dashiell, M; Hits, D; Orner, BA; Khan, AS; Roe, K; Kolodzey, J; Berger, PR; Kaba, M; Barteau, MA; Unruh, KM;
Indirizzi:
Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA Univ DelawareNewark DE USA 19716 Elect & Comp Engn, Newark, DE 19716 USA Univ Delaware, Dept Chem Engn, Newark, DE 19716 USA Univ Delaware Newark DE USA 19716 e, Dept Chem Engn, Newark, DE 19716 USA Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA Univ Delaware Newark DE USA 19716 ept Phys & Astron, Newark, DE 19716 USA
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 1, volume: 85, anno: 1999,
pagine: 578 - 582
SICI:
0021-8979(19990101)85:1<578:SMITSA>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; GERMANIUM DOTS; SI(100); GROWTH; PHOTOLUMINESCENCE; CARBON; GE; TRANSPORT; SUBSTRATE; SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Shao, XP Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA Univ Delaware Newark DE USA 19716 omp Engn, Newark, DE 19716 USA
Citazione:
X.P. Shao et al., "Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots", J APPL PHYS, 85(1), 1999, pp. 578-582

Abstract

The effects of alloying C with Ge and Si and varying the C/Ge ratio duringthe growth of very thin layers of the ternary alloy SiGeC grown on Si (100) substrates and the resulting strain modification on self-assembled and self-organized quantum dots are examined. During coherent islanded growth, where dislocations are not formed yet to relieve the strain, higher strain energy produced by greater lattice mismatch acts to reduce the island size, increase the density of islands, and significantly narrow the distribution of island sizes to nearly uniformly sized quantum dots. Strain energy can also control the critical thickness for dislocation generation within the three-dimensional islands, which then limits the maximum height which coherentislands can achieve. After the islands relax by misfit dislocations, the island sizes increase and the island size distribution becomes broader with the increase of misfit and strain. The optimal growth for a high density ofuniform coherent islands occurred for the Si0.49Ge0.48C0.03 alloy composition grown on (100) Si, at a growth temperature of 600 degrees C, with an average thickness of 5 nm, resulting in a narrow size distribution (about 42 nm diameter) and high density (about 2 X 10(10) dots/cm(2)) of quantum dots. (C) 1999 American Institute of Physics. [S0021-8979(99)00801-4].

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Documento generato il 01/10/20 alle ore 07:45:47