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Titolo:
Atomic layer epitaxy growth of BaS and BaS : Ce thin films from in situ synthesized Ba(thd)(2)
Autore:
Saanila, V; Ihanus, J; Ritala, M; Leskela, M;
Indirizzi:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland
Titolo Testata:
CHEMICAL VAPOR DEPOSITION
fascicolo: 6, volume: 4, anno: 1998,
pagine: 227 - 233
SICI:
0948-1907(199812)4:6<227:ALEGOB>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; SUPERCONDUCTING FILMS; GROUP-2 ELEMENT; TOF-ERDA; IN-SITU; PRECURSORS; VAPORIZATION; ALE; CVD;
Keywords:
barium sulfide; cerium; atomic layer epitaxy; thin films; electroluminescence;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
41
Recensione:
Indirizzi per estratti:
Indirizzo: Saanila, V Univ Helsinki, Dept Chem, POB 55, FIN-00014 Helsinki, Finland Univ Helsinki POB 55 Helsinki Finland FIN-00014 sinki, Finland
Citazione:
V. Saanila et al., "Atomic layer epitaxy growth of BaS and BaS : Ce thin films from in situ synthesized Ba(thd)(2)", CHEM VAPOR, 4(6), 1998, pp. 227-233

Abstract

BaS and BaS:Ce thin films were grown by Atomic Layer Epitaxy (ALE) from Ba(thd)(2) synthesized in situ during the film growth process by a gas-solid reaction between Hthd and Ba(OH)(2). The in situ synthesis avoids problems related to aging of Ba(thd)(2) solid source when heated for prolonged timesin normal ALE or CVD processes. H2S was used as a sulfur source. Self-limiting film growth with a rate of about 0.8 Angstrom/cycle was obtained between 300 and 350 degrees C. The films were polycrystalline and strongly oriented in the (100) direction. BaS:Ce films were deposited using Ce(thd)(4) asa dopant source. In photoluminescence these films gave a broad emission spectrum centered around 525 nm. Electroluminescence measurements gave C.I.E.color coordinates x = 0.46 and y = 0.50.

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Documento generato il 29/09/20 alle ore 10:10:48