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Titolo:
DEPTH PROFILING OF INXGA1-XAS GAAS SUPERLATTICE/
Autore:
BRUNI MR; KACIULIS S; MATTOGNO G; SIMEONE MG; VITICOLI S; MARTELLI F;
Indirizzi:
CNR,IST CHIM MAT,CP 10 I-00016 MONTEROTONDO ITALY FDN UGO BORDONI I-00142 ROME ITALY
Titolo Testata:
Applied surface science
fascicolo: 1, volume: 72, anno: 1993,
pagine: 89 - 93
SICI:
0169-4332(1993)72:1<89:DPOIGS>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
AES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
M.R. Bruni et al., "DEPTH PROFILING OF INXGA1-XAS GAAS SUPERLATTICE/", Applied surface science, 72(1), 1993, pp. 89-93

Abstract

The width of the interfaces between adjacent sublayers in an InxGa1-xAs/GaAs superlattice grown by MBE was studied by means of small-area XPS combined with Ar+ ion sputtering. An experimental depth resolution of about 4 nm has been achieved in the profiles of the peaks of X-ray-excited photoelectrons and Auger electrons. A growth asymmetry of InxGa1-xAs/GaAs and GaAs/InxGa1-xAs interfaces has been detected in the obtained depth profiles. Only a negligible broadening of the heterointerfaces was observed up to the profiling depth of about 200 nm. The influence of casual effects of the ion sputtering on the experimental interface width is discussed briefly.

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Documento generato il 30/11/20 alle ore 00:45:24