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Titolo:
ION-IMPLANTED DOPANT ENVIRONMENTS IN AMORPHOUS-SILICON
Autore:
GREAVES GN; DENT AJ; DOBSON BR; KALBITZER S; MULLER G;
Indirizzi:
SERC,DARESBURY LAB,DARESBURY LAB WARRINGTON WA4 4AD CHESHIRE ENGLAND MESSERSCHMITT BOELKOW BLOHM GMBH W-8000 MUNICH 80 GERMANY MAX PLANCK INST NUCL PHYS W-6900 HEIDELBERG 1 GERMANY
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
, volume: 32, anno: 1993, supplemento:, 32-2
pagine: 622 - 624
SICI:
0021-4922(1993)32:<622:IDEIA>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Keywords:
XAFS; REFLECTIVITY; AMORPHOUS SILICON; DOPANT; GALLIUM; ION-IMPLANTED; ANNEALING; RECRYSTALLIZATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
7
Recensione:
Indirizzi per estratti:
Citazione:
G.N. Greaves et al., "ION-IMPLANTED DOPANT ENVIRONMENTS IN AMORPHOUS-SILICON", JPN J A P 1, 32, 1993, pp. 622-624

Abstract

X-ray absorption fine structure (XAFS) spectroscopy has been measuredat glancing angles of incidence on 5x10(19) gallium atoms cm-3 ion-implanted in amorphous silicon. The effects of preparation (ion-damaged or rf glow-discharge) of amorphous silicon are discussed. In particular, heat treatment has been investigated to examine the local structureof the dopants at various stages of annealing and recrystallisation.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/09/20 alle ore 12:32:59