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Titolo:
LOCAL ATOMIC-STRUCTURE IN SB+ AND SB+ B+ HEAVILY IMPLANTED SILICON FROM FLUORESCENCE EXAFS/
Autore:
ALLAIN JL; BOURRET A; REGNARD JR; ARMIGLIATO A;
Indirizzi:
CEN,DRMFC,SP2M,S-85X F-38041 GRENOBLE FRANCE CNR,IST LAMEL I-40126 BOLOGNA ITALY
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
, volume: 32, anno: 1993, supplemento:, 32-2
pagine: 616 - 618
SICI:
0021-4922(1993)32:<616:LAISAS>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Keywords:
SB IN SI; SB-B COIMPLANTATION; FLUORESCENCE; SB PRECIPITATES; SBV2 VACANCY COMPLEXES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
4
Recensione:
Indirizzi per estratti:
Citazione:
J.L. Allain et al., "LOCAL ATOMIC-STRUCTURE IN SB+ AND SB+ B+ HEAVILY IMPLANTED SILICON FROM FLUORESCENCE EXAFS/", JPN J A P 1, 32, 1993, pp. 616-618

Abstract

Monocrystalline silicon wafers were implanted with Sb and B ions and the Sb atomic environment sounded by fluorescence EXAFS. After a thermal annealing it is shown that the Sb atoms form SbV2 vac complexes andantimony precipitates. The co-implantation with boron delays the formation of precipitate

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 07:19:00