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Titolo:
WIDE-BAND HIGH-POWER AMPLIFIER DESIGN USING NOVEL BAND-PASS FILTERS WITH FETS PARASITIC REACTANCES
Autore:
ITOH Y; TAKAGI T; MASUNO H; KOHNO M; HASHIMOTO T;
Indirizzi:
MITSUBISHI ELECTR CORP,ELECTOOPT & MICROWAVE SYST LAB KAMAKURA 247 JAPAN
Titolo Testata:
IEICE transactions on electronics
fascicolo: 6, volume: E76C, anno: 1993,
pagine: 938 - 943
SICI:
0916-8524(1993)E76C:6<938:WHADUN>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Keywords:
AMPLIFIER; WIDE-BAND; HIGH POWER; HEMT; BANDPASS FILTER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
NO
Recensione:
Indirizzi per estratti:
Citazione:
Y. Itoh et al., "WIDE-BAND HIGH-POWER AMPLIFIER DESIGN USING NOVEL BAND-PASS FILTERS WITH FETS PARASITIC REACTANCES", IEICE transactions on electronics, E76C(6), 1993, pp. 938-943

Abstract

A wideband high power amplifier design using a novel band-pass filterwith FET's parasitic reactances has been developed. The feature of this design is in that it can provide wide bandwidth and high gain of high power amplifiers. Furthermore, the lower cutoff frequency and bandwidth can be varied independently. With the use of this design, a Ku-band two-stage high power amplifier having a bandwidth of 18% has achieved a linear gain of 9.75 +/- 1.75 dB, a saturated output power of greater than 37 dBm, and a power-added efficiency of greater than 10.4%.

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Documento generato il 21/09/20 alle ore 02:30:37