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Titolo:
QUANTIFICATION OF SI3N4 LPCVD INHIBITION ON OXIDE SURFACES
Autore:
KWAKMAN LFT; LINDOW EJ; GRANNEMAN EHA; MARTIN F; VELER JC; JOLY JP;
Indirizzi:
AMTC,ASME BILTHOVEN NETHERLANDS CEA,CENG,LETI GRENOBLE FRANCE
Titolo Testata:
Applied surface science
, volume: 70-1, anno: 1993,
parte:, B
pagine: 629 - 633
SICI:
0169-4332(1993)70-1:<629:QOSLIO>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
2
Recensione:
Indirizzi per estratti:
Citazione:
L.F.T. Kwakman et al., "QUANTIFICATION OF SI3N4 LPCVD INHIBITION ON OXIDE SURFACES", Applied surface science, 70-1, 1993, pp. 629-633

Abstract

Si3N4 films were produced in an integrated vacuum processing system with separate modules for HF vapour etching, silicon thermal oxidation and LPCVD of Si3N4. It appears that the initial nucleation rate of thenitride growth depends strongly on the substrate surface. Si3N4 nucleates immediately on HF-vapour etched and thus oxide-free silicon, whereas on silicon oxide an appreciable retardation of growth takes place,which depends on the conditioning of the oxide prior to deposition. Conversion of the (O)N film into (O)NO, the dielectrics of choice in advanced memory capacitors, reveals that the degree of resistance of thenitride film against wet oxidation (''punch-through'') is directly related to the growth inhibition time and hence to the film micro-roughness. Details are presented on the relation between wafer pre-treatment, nitride process conditions, growth inhibition time and the ultimate wet-oxidation resistance of the nitride film.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 08/07/20 alle ore 23:49:32