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Titolo:
HETEROEPITAXIAL GROWTH AND ESR EVALUATION OF 3C-SIC
Autore:
NAGASAWA H; YAMAGUCHI Y; IZUMI T; TONOSAKI K;
Indirizzi:
HOYA CORP,MAT RES LAB,3-3-1 MUSASHINO AKISHIMA TOKYO 196 JAPAN TOKAI UNIV,FAC ENGN,DEPT ELECTR HIRATSUKA KANAGAWA 25912 JAPAN
Titolo Testata:
Applied surface science
, volume: 70-1, anno: 1993,
parte:, B
pagine: 542 - 545
SICI:
0169-4332(1993)70-1:<542:HGAEEO>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
H. Nagasawa et al., "HETEROEPITAXIAL GROWTH AND ESR EVALUATION OF 3C-SIC", Applied surface science, 70-1, 1993, pp. 542-545

Abstract

The heteroepitaxial growth of 3C-SiC on Si substrates has been studied in a hot-wall type LPCVD reactor with an alternating supply of SiH2Cl2 and C2H2 in the temperature range of 750 to 1050-degrees-C. Siliconcarbide films have been grown only at temperatures above 800-degrees-C. The growth rate of the SiC films increases with temperature above 900-degrees-C, while a constant growth rate (4.4 angstrom/cycle) is obtained in the temperature range between 800 and 900-degrees-C. The characteristics of the growth rate of the SiC films can be understood by taking into account the decompositions of adsorbed SiCl2, on the surface of the substrates. The defect structures of grown SiC layer has beenstudied by the ESR (electron spin resonance) method. Three paramagnetic defects, that is, Si-dangling bonds (g = 2.0055, DELTAH(pp) = 5.5 Oe) in the Si amorphous region, Si-dangling bonds with C atom neighbors(g = 2.0033, DELTAH(pp) = 3.0 Oe), and C-dangling bonds with C atom neighbors (g = 2.0030, DELTAH(pp) = 15.0 Oe) were observed by ESR analysis.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 07/07/20 alle ore 12:58:13