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Titolo:
HIGHLY ORIENTED, TEXTURED DIAMOND FILMS ON SILICON VIA BIAS-ENHANCED NUCLEATION AND TEXTURED GROWTH
Autore:
STONER BR; SAHAIDA SR; BADE JP; SOUTHWORTH P; ELLIS PJ;
Indirizzi:
KOBE STEEL USA LTD,CTR ELECTR MAT,79 TW ALEXANDER DR,POB 13608 RES TRIANGLE PK NC 27709 KOBE STEEL EUROPE LTD,RES LAB GUILDFORD GU2 5AF SURREY ENGLAND
Titolo Testata:
Journal of materials research
fascicolo: 6, volume: 8, anno: 1993,
pagine: 1334 - 1340
SICI:
0884-2914(1993)8:6<1334:HOTDFO>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
GENERATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
B.R. Stoner et al., "HIGHLY ORIENTED, TEXTURED DIAMOND FILMS ON SILICON VIA BIAS-ENHANCED NUCLEATION AND TEXTURED GROWTH", Journal of materials research, 8(6), 1993, pp. 1334-1340

Abstract

Highly oriented diamond films were grown on single-crystal silicon substrates. Textured films were first nucleated by a two-step process that involved the conversion of the silicon surface to an epitaxial SiC layer, followed by bias-enhanced nucleation. The nucleation stage, which produced a partially oriented diamond film, was immediately followed by a (100) textured growth process, thus resulting in a film surfacewhere approximately 100% of the grains are epitaxially oriented relative to the silicon substrate. The diamond films were characterized by both SEM and Raman spectroscopy. Structural defects in the film are discussed in the context of their potential effect on the electrical characteristics of the resulting film.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/12/20 alle ore 08:17:43